Single event upset, single event upset
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References Advanced Theory and Simulations. Бот-переводчик Перевод в Telegram Перейти.
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Mendenhall Marcus H 4 ,. Dodd Paul E 5 ,. Schrimpf Ron D 2 ,. Massengill Lloyd W 2 ,. Hoang Tan 3 ,. Wan Hsing 3 ,.
Padovani Rick 3 ,. Fabula Joe J 3. Hide authors affiliations Show authors affiliations: 5 affiliations. Xilinx, Inc. Publication type : Journal Article. Publication date : Quartile SCImago. Quartile WOS. Impact factor : 1. ISSN : , DOI: Copy DOI. Electrical and Electronic Engineering. Nuclear and High Energy Physics.
Nuclear Energy and Engineering. Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. Monte Carlo simulation is used to model the response and predict an on-orbit error rate. References Export references.
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Science China Information Sciences. Science China Information Sciences, 2, 3. Chinese Physics B. Applied Sciences Switzerland. Electronics Switzerland. Acta Astronautica. Microelectronics Reliability. Advanced Theory and Simulations. IEEE Access. Acta Physica Sinica. SAE Technical Papers. Citation Export Print. Javascript must be enabled for narrowing. Results 1 - 1 of 1. Search took: 0. Katunin, Yu. Abstract Abstract. The result of a single nuclear particle strike only on one transistor cluster of the two transistor clusters of the DICE cell is a single-event transient, but not a single-event upset.
The use of the new read-data-correction unit increases the soft-error immunity of the two-transistor cluster DICE cell by the successful DICE cell data reading. The successful data reading has been confirmed by the simulation of the nm multiport CMOS memory cell with the read-data-correction unit [ru]. Country of publication.
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